Serveur d'exploration sur l'Indium

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Indium doped niobium phosphates as intermediate temperature proton conductors

Identifieur interne : 000A80 ( Main/Repository ); précédent : 000A79; suivant : 000A81

Indium doped niobium phosphates as intermediate temperature proton conductors

Auteurs : RBID : Pascal:13-0148674

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English descriptors

Abstract

Indium doped niobium phosphates were prepared from precursors of trivalent indium oxide, pentavalent niobium oxide and phosphoric acid. The obtained materials were characterized by X-ray diffraction, impedance spectroscopy, FT-IR spectroscopy and scanning electron microscopy. It was found that the indium doping promoted formation of the cubic Nb2P4O15 phase instead of the monoclinic Nb5P7O30 phase in the pristine niobium phosphates and enhanced the preservation of OH functional groups in the phosphates. The preserved OH functionalities in the phosphates after the heat treatment at 650 °C contributed to the anhydrous proton conductivity. The Nb0.9In0.1 phosphate exhibited a proton conductivity of five times higher than that of the un-doped analog at 250 °C. The conductivity was stabilized at a level of above 0.02 S cm-1 under dry atmosphere at 250 °C during the stability evaluation for 3 days.

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Pascal:13-0148674

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<title xml:lang="en" level="a">Indium doped niobium phosphates as intermediate temperature proton conductors</title>
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<name>YUNJIE HUANG</name>
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<s1>Department of Energy Conversion and Storage, Kemitorvet 207, Technical University of Denmark</s1>
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<name>QINGFENG LI</name>
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<name sortKey="Christensen, Erik" uniqKey="Christensen E">Erik Christensen</name>
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<name>MIN YIN</name>
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<s1>Laboratory of Advanced Power Sources, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences</s1>
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<name sortKey="Oluf Jensen, Jens" uniqKey="Oluf Jensen J">Jens Oluf Jensen</name>
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<name sortKey="Bjerrum, Niels J" uniqKey="Bjerrum N">Niels J. Bjerrum</name>
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<author>
<name>WEI XING</name>
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<idno type="ISSN">0360-3199</idno>
<title level="j" type="abbreviated">Int. j. hydrogen energy</title>
<title level="j" type="main">International journal of hydrogen energy</title>
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<term>Characterization</term>
<term>Doped materials</term>
<term>Electrical properties</term>
<term>Fuel cell</term>
<term>Indium</term>
<term>Ionic conductors</term>
<term>Niobium Phosphates</term>
<term>Proton conductivity</term>
<term>Temperature range 400-1000 K</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr">
<term>Indium</term>
<term>Matériau dopé</term>
<term>Niobium Phosphate</term>
<term>Caractérisation</term>
<term>Domaine température 400-1000 K</term>
<term>Conductivité protonique</term>
<term>Conducteur ionique</term>
<term>Pile combustible</term>
<term>Propriété électrique</term>
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<front>
<div type="abstract" xml:lang="en">Indium doped niobium phosphates were prepared from precursors of trivalent indium oxide, pentavalent niobium oxide and phosphoric acid. The obtained materials were characterized by X-ray diffraction, impedance spectroscopy, FT-IR spectroscopy and scanning electron microscopy. It was found that the indium doping promoted formation of the cubic Nb
<sub>2</sub>
P
<sub>4</sub>
O
<sub>15 </sub>
phase instead of the monoclinic Nb
<sub>5</sub>
P
<sub>7</sub>
O
<sub>30</sub>
phase in the pristine niobium phosphates and enhanced the preservation of OH functional groups in the phosphates. The preserved OH functionalities in the phosphates after the heat treatment at 650 °C contributed to the anhydrous proton conductivity. The Nb
<sub>0.9</sub>
In
<sub>0.1</sub>
phosphate exhibited a proton conductivity of five times higher than that of the un-doped analog at 250 °C. The conductivity was stabilized at a level of above 0.02 S cm
<sup>-1</sup>
under dry atmosphere at 250 °C during the stability evaluation for 3 days.</div>
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<s1>Indium doped niobium phosphates as intermediate temperature proton conductors</s1>
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<s1>YUNJIE HUANG</s1>
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<s1>QINGFENG LI</s1>
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<s1>ANFIMOVA (Tatiana V.)</s1>
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<s1>OLUF JENSEN (Jens)</s1>
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<s1>BJERRUM (Niels J.)</s1>
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<fA11 i1="08" i2="1">
<s1>WEI XING</s1>
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<s1>INIST</s1>
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<fA45>
<s0>31 ref.</s0>
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<fA47 i1="01" i2="1">
<s0>13-0148674</s0>
</fA47>
<fA60>
<s1>P</s1>
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<s0>A</s0>
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<s0>International journal of hydrogen energy</s0>
</fA64>
<fA66 i1="01">
<s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG">
<s0>Indium doped niobium phosphates were prepared from precursors of trivalent indium oxide, pentavalent niobium oxide and phosphoric acid. The obtained materials were characterized by X-ray diffraction, impedance spectroscopy, FT-IR spectroscopy and scanning electron microscopy. It was found that the indium doping promoted formation of the cubic Nb
<sub>2</sub>
P
<sub>4</sub>
O
<sub>15 </sub>
phase instead of the monoclinic Nb
<sub>5</sub>
P
<sub>7</sub>
O
<sub>30</sub>
phase in the pristine niobium phosphates and enhanced the preservation of OH functional groups in the phosphates. The preserved OH functionalities in the phosphates after the heat treatment at 650 °C contributed to the anhydrous proton conductivity. The Nb
<sub>0.9</sub>
In
<sub>0.1</sub>
phosphate exhibited a proton conductivity of five times higher than that of the un-doped analog at 250 °C. The conductivity was stabilized at a level of above 0.02 S cm
<sup>-1</sup>
under dry atmosphere at 250 °C during the stability evaluation for 3 days.</s0>
</fC01>
<fC02 i1="01" i2="X">
<s0>001D06D03E</s0>
</fC02>
<fC02 i1="02" i2="X">
<s0>230</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE">
<s0>Indium</s0>
<s2>NC</s2>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG">
<s0>Indium</s0>
<s2>NC</s2>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA">
<s0>Indio</s0>
<s2>NC</s2>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE">
<s0>Matériau dopé</s0>
<s5>02</s5>
</fC03>
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<s0>Doped materials</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE">
<s0>Niobium Phosphate</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG">
<s0>Niobium Phosphates</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA">
<s0>Niobio Fosfato</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE">
<s0>Caractérisation</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG">
<s0>Characterization</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA">
<s0>Caracterización</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE">
<s0>Domaine température 400-1000 K</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG">
<s0>Temperature range 400-1000 K</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE">
<s0>Conductivité protonique</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG">
<s0>Proton conductivity</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA">
<s0>Conductividad protónica</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE">
<s0>Conducteur ionique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG">
<s0>Ionic conductors</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE">
<s0>Pile combustible</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG">
<s0>Fuel cell</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA">
<s0>Pila combustión</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE">
<s0>Propriété électrique</s0>
<s5>33</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG">
<s0>Electrical properties</s0>
<s5>33</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA">
<s0>Propiedad eléctrica</s0>
<s5>33</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE">
<s0>Phosphore Composé</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>54</s5>
</fC07>
<fC07 i1="01" i2="X" l="ENG">
<s0>Phosphorus Compounds</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>54</s5>
</fC07>
<fC07 i1="01" i2="X" l="SPA">
<s0>Fósforo Compuesto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>54</s5>
</fC07>
<fC07 i1="02" i2="X" l="FRE">
<s0>Métal transition Composé</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>55</s5>
</fC07>
<fC07 i1="02" i2="X" l="ENG">
<s0>Transition metal Compounds</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>55</s5>
</fC07>
<fC07 i1="02" i2="X" l="SPA">
<s0>Metal transición Compuesto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>55</s5>
</fC07>
<fN21>
<s1>125</s1>
</fN21>
</pA>
</standard>
</inist>
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